Tracking plasma etch process variations using Principal Component Analysis of OES data.


Bacelli, G and Ringwood, John (2007) Tracking plasma etch process variations using Principal Component Analysis of OES data. In: ICINCO 2007, 4th International Conference on Information in Control, Automation and Robotics, 9 - 12 May, 2007, Angers, France. (Unpublished)

[img] Download (149kB)


Share your research

Twitter Facebook LinkedIn GooglePlus Email more...



Add this article to your Mendeley library


Abstract

This paper explores the application of principal component analysis (PCA) to the monitoring of within-lot and between-lot plasma variations that occur in a plasma etching chamber used in semiconductor manufacturing, as observed through Optical Emission Spectroscopy (OES) analysis of the chamber exhaust. Using PCA, patterns that are difficult to identify in the 2048-dimension OES data are condensed into a small number of principle components (PCs). It is shown, with the aid of experimental data, that by simply tracking changes in the directions of these PCs both inter-lot and intra-lot patterns can be identified.

Item Type: Conference or Workshop Item (Paper)
Keywords: Semiconductor manufacturing; Plasma etching; Metal etching; Optical emission spectroscopy (OES); Principal component analysis (PCA); Batch processing.
Academic Unit: Faculty of Science and Engineering > Electronic Engineering
Item ID: 1424
Depositing User: Professor John Ringwood
Date Deposited: 08 Jun 2009 13:11
Refereed: Yes
URI:

Repository Staff Only(login required)

View Item Item control page

Document Downloads

More statistics for this item...