Lynn, Shane and Ringwood, John and Ragnoli, Emanuele and McLoone, Sean and MacGearailt, Niall
Virtual Metrology for Plasma Etch using Tool
Advanced Semiconductor Manufacturing Conference, 2009. .
This paper presents work carried out with data
from an industrial plasma etch process. Etch tool parameters, available during wafer processing time, are used to predict wafer etch rate. These parameters include variables such as power, pressure, temperature, and RF measurement. A number of variable selection techniques are examined, and a novel piecewise modelling effort is discussed. The achievable accuracy and complexity trade-offs of plasma etch modelling are discussed
||Virtual Metrology; Plasma Etch; Tool
Variables; Plasma materials processing;
||Science & Engineering > Electronic Engineering
Professor John Ringwood
||19 May 2010 13:51
|Journal or Publication Title:
||Advanced Semiconductor Manufacturing Conference, 2009.
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