Lynn, Shane and MacGearailt, Niall and Ringwood, John
Real-time Virtual Metrology and Control
of Plasma Electron Density in an Industrial
Plasma Etch Chamber.
Proceedings of 18th IFAC World Congress.
Plasma etching is a semiconductor manufacturing process during which material is
removed from the surface of silicon wafers using gases in plasma form. A host of chemical and
electrical complexities make the etch process notoriously dicult to model and troublesome
to control. This work demonstrates the use of a real-time model predictive control scheme to
maintain a consistent plasma electron density in the presence of disturbances to the ground
path of the chamber. The electron density is estimated in real time using a virtual metrology
model based on plasma impedance measurements. Recursive least squares is used to update the
controller model parameters in real time to achieve satisfactory control of electron density over
a wide operating space.
||Applications in semiconductor manufacturing; Estimation and fault detection; Model predictive and optimization-based control;
||Faculty of Science and Engineering > Electronic Engineering
Professor John Ringwood
||30 Mar 2012 11:52
|Journal or Publication Title:
||Proceedings of 18th IFAC World Congress
||International Federation of Automatic Control (IFAC)
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