Taher, H. and Farrell, Ronan and Schreurs, D. and Nauwelaers, Bart
(2015)
Extraction of small-signal model parameters
of Si/SiGe heterojunction bipolar transistor
using least squares support vector machines.
Electronics Letters, 51 (22).
pp. 1821-1823.
ISSN 0013-5194
Abstract
A novel straightforward methodology for extracting bias-dependent
small-signal equivalent circuit model parameters (SSECMPs) of
silicon/silicon–germanium heterojunction bipolar transistors is presented.
The inverse mapping between SSECMPs and scattering (S)
parameters is established and fitted using simulated data of the
SSECM. Since the problem has large input space, S-parameters at
many frequency points, the least squares support vector machines
concept is used as regression technique. Physical SSECMPs values
are obtained using the proposed methodology. Moreover, an excellent
agreement is noted between the S-parameters measurements and their
simulated counterpart using the extracted SSECMPs in the frequency
range from 40 MHz to 40 GHz at different bias conditions.
| Item Type: |
Article
|
| Additional Information: |
This research was supported by Science Foundation
Ireland under grant no. 10/CE/I1853. |
| Keywords: |
small-signal equivalent circuit model parameters; SSECMPs; silicon/silicon–germanium heterojunction bipolar transistors; |
| Academic Unit: |
Faculty of Science and Engineering > Electronic Engineering |
| Item ID: |
9574 |
| Depositing User: |
Ronan Farrell
|
| Date Deposited: |
20 Jun 2018 14:30 |
| Journal or Publication Title: |
Electronics Letters |
| Publisher: |
IEEE |
| Refereed: |
Yes |
| Funders: |
Science Foundation Ireland (SFI) |
| URI: |
|
| Use Licence: |
This item is available under a Creative Commons Attribution Non Commercial Share Alike Licence (CC BY-NC-SA). Details of this licence are available
here |
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